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NLB-300
0
Typical Applications * Narrow and Broadband Commercial and Military Radio Designs * Linear and Saturated Amplifiers Product Description
The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NLB-300 provides flexibility and stability. The NLB-300 is packaged in a low-cost, surface-mount plastic package, providing ease of assembly for high-volume tape-and-reel requirements.
Symbol
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
* Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
B
MILLIMETERS
Min. Nom. Max. Min.
INCHES
Nom. Max.
D 4M A
C N5 1 2 3 4 5
A B C D E F G H J K L M N
0.535 REF. 2.39 2.54 2.69 0.436 0.510 0.586 2.19 2.34 2.49 1.91 2.16 2.41 1.32 1.52 1.72 0.10 0.15 0.20 0.535 0.660 0.785 0.05 0.10 0.15 0.65 0.75 0.85 0.85 0.95 1.05 4.53 4.68 4.83 4.73 4.88 5.03
0.021 REF. 0.094 0.100 0.106 0.017 0.020 0.023 0.086 0.092 0.098 0.075 0.085 0.095 0.052 0.060 0.068 0.004 0.006 0.008 0.021 0.026 0.031 0.002 0.004 0.006 0.025 0.029 0.033 0.033 0.037 0.041 0.178 0.184 0.190 0.186 0.192 0.198
E
6 0.08 S Seating Plane
NOTE: All dimensions are in millimeters, and the dimensions in inches are for reference only.
F 1J G
2
H
Gauge Plane
S
0.1
L3
Kx3
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: Micro-X, 4-Pin, Plastic
Features * Reliable, Low-Cost HBT Design * 13.0dB Gain, +11.1dBm P1dB@2GHz * High P1dB of +14.1dBm@6.0GHz and
GND 4 MARKING - N3
+12.7dBm@10.0GHz * Single Power Supply Operation * 50 I/O Matched for High Freq. Use
RF IN 1
3 RF OUT
Ordering Information
2 GND Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively) NLB-300-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer's Tool Kit RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com NLB-300
Functional Block Diagram
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NLB-300
Absolute Maximum Ratings Parameter
RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature
Rating
+20 300 70 200 -45 to +85 -65 to +150
Unit
dBm mW mA C C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Small Signal Power Gain, S21
Specification Min. Typ. Max.
12.0 13.0 10.7 8.9 8.9 8.5 0.1 2.2:1 2.8:1 2.0:1 2.2:1 2.9:1 2.4:1 11.1 14.1 12.7 4.9 +28.6 +27.0 -16 3.8 -0.0015
Unit
dB dB dB dB dB dB
Condition
VD =+3.8V, ICC =50mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz f=10.0GHz to 12.0GHz f=5.0GHz to 10.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 12.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 12.0GHz f=2.0GHz f=6.0GHz f=10.0GHz f=3.0GHz f=2.0GHz f=6.0GHz f=0.1GHz to 20.0GHz
8.5 Gain Flatness, GF Input VSWR
Output VSWR
Output Power @ -1dB Compression, P1dB
Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, GT/T
dBm dBm dBm dB dBm dB V dB/C
3.6
4.2
MTTF versus Temperature @ ICC =50mA
Case Temperature Junction Temperature MTTF 85 113 >1,000,000 147 C C hours C/W
Thermal Resistance
JC
J T - T CASE -------------------------- = JC ( C Watt ) V D I CC
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Pin 1 Function RF IN Description
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
Interface Schematic
2 3
GND RF OUT
RF OUT
( V CC - V DEVICE ) R = -----------------------------------------I CC
RF IN
4
GND
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2.
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NLB-300
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC RCC
4 In 1 C block 2 3
L choke
(optional)
Out C block VDEVICE
Recommended Bias Resistor Values
Supply Voltage, VCC (V) Bias Resistor, RCC () 5 22 8 82 10 122 12 162 15 222 20 322
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Extended Frequency InGaP Amplifier Designer's Tool Kit NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. * * * * 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation
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NLB-300
Tape and Reel Dimensions
All Dimensions in Millimeters
T A B D O S
F
14.732 mm (7") REEL ITEMS Diameter FLANGE Thickness Space Between Flange Outer Diameter Spindle Hole Diameter Key Slit Width Key Slit Diameter Plastic, Micro-X SYMBOL SIZE (mm) B 178 +0.25/-4.0 T F O S A D 18.4 MAX 12.8 +2.0 SIZE (inches) 7.0 +0.079/-0.158 0.724 MAX 0.50 +0.08
HUB
76.2 REF 3.0 REF 13.716 +0.5/-0.2 0.540 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN
LEAD 1
N3
N3 All dimensions in mm
User Direction of Feed
N3
N3
4.0 2.00 0.05
SEE NOTE 6 SEE NOTE 1
0.30 0.05 R0.3 MAX.
5.0
+0.1 -0.0
A
1.75
5.0 MIN. B1 Bo
5.50 0.05
SEE NOTE 6
12.0 0.3
Ko SECTION A-A
3.0 Ao
A1
8.0
A
R0.3 TYP.
NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C. 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
Ao = 7.0 MM A1 = 1.8 MM Bo = 7.0 MM B1 = 1.3 MM Ko = 2.1 MM
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S11 versus Frequency, Over Temperature
0.0 S11, +25C S11, -40C -2.0 S11, +85C 12.0 14.0
S21 versus Frequency, Over Temperature
-4.0
10.0
S21 (dB)
-8.0
S21 (dB)
-6.0
8.0
6.0
-10.0
4.0 S21, +25C
-12.0
2.0
S21, -40C S21, +85C
-14.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency, Over Temperature
0.0 S12, +25C S12, -40C S12, +85C -5.0 -10.0 -15.0 -10.0 0.0 -5.0
S22 versus Frequency, Over Temperature
S21 (dB)
S22 (dB)
-15.0 -20.0
-20.0 -25.0 -30.0 -35.0 S11, +25C -40.0 S11, -40C S11, +85C
-25.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
-45.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Frequency (GHz)
Frequency (GHz)
Output P1dB versus Frequency Across Temperature
16.0 12.0
Noise Frequency versus Frequency at +25C
14.0 10.0 12.0
Output P1dB (dBm)
10.0
8.0
Noise Figure (dB)
25C 40C 85C 0.0 2.0 4.0 6.0 8.0 10.0 12.0
8.0
6.0
6.0
4.0
4.0 2.0
2.0
0.0
0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0
Frequency (GHz)
Frequency (GHz)
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NLB-300
Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB
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